منابع مشابه
On strongly dense submodules
The submodules with the property of the title ( a submodule $N$ of an $R$-module $M$ is called strongly dense in $M$, denoted by $Nleq_{sd}M$, if for any index set $I$, $prod _{I}Nleq_{d}prod _{I}M$) are introduced and fully investigated. It is shown that for each submodule $N$ of $M$ there exists the smallest subset $D'subseteq M$ such that $N+D'$ is a strongly dense submodule of $M$ and $D'bi...
متن کاملPo-S-Dense Monomorphism
In this paper we take $mathcal A$ to be the category {bf Pos-S} of $S$-posets, for a posemigroup $S$, ${mathcal M}_{pd}$ to be the class of partially ordered sequantially-dense monomorphisms and study the categorical properties, such as limits and colimits, of this class. These properties are usually needed to study the homological notions, such as injectivity, of $S$-...
متن کاملDense Two-dimensional Integration of Optoelectronics and Electronics for Interconnections
Optics has many features, beyond those already exploited in long-distance fiber communications, that make it interesting for interconnections at short distance, including dense optical interconnections directly to silicon integrated circuit chips. Hybrid technologies, such as solder-bump bonding, have recently been successfully used to attach two-dimensional arrays of optical detectors, emitter...
متن کاملSubwavelength semiconductor lasers for dense chip-scale integration
Metal-clad subwavelength lasers have recently become excellent candidates for light sources in densely packed chip-scale photonic circuits. In this review, we summarize recent research efforts in the theory, design, fabrication, and characterization of such lasers. We detail advancements of both the metallodielectric and the coaxial type lasers: for the metallo-dielectric type, we discuss opera...
متن کاملScalable 3D dense integration of photonics on bulk silicon.
We experimentally show vertically stacked, multi-layer, low-temperature deposited photonics for integration on processed microelectronics. Waveguides, microrings, and crossings are fabricated out of 400°C PECVD Si3N4 and SiO2 in a two layer configuration. Waveguide losses of ~1 dB/cm in the L-band are demonstrated using standard processing and without post-deposition annealing, along with verti...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nature Photonics
سال: 2013
ISSN: 1749-4885,1749-4893
DOI: 10.1038/nphoton.2013.83